发明名称 |
Transistor structures, methods of forming transistor structures, and methods of forming insulative material against conductive structures |
摘要 |
The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
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申请公布号 |
US2002033512(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010997737 |
申请日期 |
2001.11.28 |
申请人 |
HONEYCUTT JEFFREY W.;SHAHJAMALI HASSAN;SMITH DANIEL |
发明人 |
HONEYCUTT JEFFREY W.;SHAHJAMALI HASSAN;SMITH DANIEL |
分类号 |
H01L21/314;H01L21/316;H01L21/60;H01L21/768;H01L21/8234;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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