CLEANING GASSES AND ETCHING GASES

摘要

A first chamber-cleaning gas and a first etching gas for silicon-containing films, each characterized by comprising specific amounts of O2 and at least one compound selected from the group consisting of FCOF, CF3OCOF, and CF3OCF2OCOF. They may contain other gas(es) according to need. Also provided are a second chamber-cleaning gas and a second etching gas for silicon-containing films, each characterized by comprising specific amounts of O2 and one of CF3COF, C3F7COF, and CF2(COF)2. They also may contain other gas(es) according to need. The chamber-cleaning gases and etching gases for silicon-containing films have a low warming potential and are less apt to generate CF4, which is an environmentally harmful waste gas regarded as a cause of global warming. They are hence friendly to the environment, are easy to handle, and have excellent suitability for waste gas treatment. The chamber-cleaning gases have an exceedingly high cleaning rate.