SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

There is provided a semiconductor device which causes less element characteristic fluctuation and hardly causes parasitic actions even when a wire comprising a barrier metal made of a titanium material is provided. The semiconductor device comprises a MOS transistor provided on the surface side of a semiconductor substrate, a first silicon oxide film, a silicon nitride film-and a second silicon oxide film-provided on the semiconductor substrate while covering the MOS transistor and a wire having a barrier metal made of a titanium material and provided on the insulating film, and is characterized in that the silicon nitride film covers the MOS transistor and has an opening on an element isolating region for isolating the MOS transistors. The silicon nitride film may be what is formed in one and same process with that of a dielectric film of a capacitor element.