发明名称 |
Inspection system by charged particle beam and method of manufacturing devices using the system |
摘要 |
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample. |
申请公布号 |
US2002033449(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010891611 |
申请日期 |
2001.06.27 |
申请人 |
NAKASUJI MAMORU;NOJI NOBUHARU;SATAKE TOHRU;KIMBA TOSHIFUMI;SOBUKAWA HIROSI;YOSHIKAWA SHOJI;KARIMATA TSUTOMU;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI;TAKAGI TORU |
发明人 |
NAKASUJI MAMORU;NOJI NOBUHARU;SATAKE TOHRU;KIMBA TOSHIFUMI;SOBUKAWA HIROSI;YOSHIKAWA SHOJI;KARIMATA TSUTOMU;OOWADA SHIN;SAITO MUTSUMI;HAMASHIMA MUNEKI;TAKAGI TORU |
分类号 |
G01N23/225;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28;(IPC1-7):G21K7/00;G01N23/00 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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