| 摘要 |
<p>A photovoltaic component with at least one tricrystalline wafer (2) that has a certain basic doping, a light-receiving side (3), an electric bonding side (4) opposite the light-receiving side (3), and at least one interdigital semiconductor structure (5) arranged on the electric bonding site (4) with at least on n-type semiconductor part-structure (6) and at least one p-type semiconductor part-structure (7) arranged at a certain interval (8) to the n-type semiconductor part-structure (6). One of the semiconductor part-structures and the silicon wafer (2) thus form a p-n junction (9).</p> |
