| 摘要 |
<p>The preferred embodiments described herein provide a memory device and methods for use therewith. In one preferred embodiment, a memory device (200) is provided having error checking and correcting code circuitry (220) which generates at least one ECC bit based upon at least one data bit and stores them both in the memory cells of the device. The memory device may be either a write-once memory device, a three-dimensional electronic memory device, or both.</p> |
