METHOD FOR ANNEALING USING PARTIAL ABSORBER LAYER EXPOSED TO RADIANT ENERGY AND ARTICLE MADE WITH PARTIAL ABSORBER LAYER

摘要

A method of the invention comprises forming a partial absorber layer "PAL" (34) over at least one integrated transistor device formed on a semiconductor substrate (10), and exposing the PAL (34) to radiant energy (38). First and second portions of radiant energy (38) are passed through the PAL (34) and absorbed thermally conducted, respectively, to the source (28) and drain (30) regions. Thereby, the junctions of the integrated device are annealed. Accordingly, the source (28) and drain (30) regions can be melted for annealing without overheating the PAL (34) overlying or the substrate (10) beneath the filed isolation regions (12).