Semiconductor device and manufacturing method thereof

摘要

A semiconductor element comprises an insulating layer formed on a semiconductor substrate; a plurality of windows formed in the insulating layer, exposing predetermined portions of the semiconductor substrate; epitaxial silicon layers formed on the insulating layer and within the windows, the epitaxial silicon layers being separated at predetermined areas; and semiconductor devices, each formed on one of the epitaxial silicon layers. The method for manufacturing a semiconductor element comprises forming an insulating layer on a silicon wafer and selectively etching the insulating layer to form a plurality of windows that expose the silicon wafer; forming an epitaxial silicon layer over an entire surface of the insulating layer by performing an epitaxial growth process; selectively etching the epitaxial silicon layer to separate the same at predetermined areas between the windows, thereby realizing a plurality of epitaxial silicon layers; and forming individual semiconductor devices on each of the epitaxial silicon layers.