发明名称 |
Method of forming polycrystalline semiconductor film |
摘要 |
It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.
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申请公布号 |
US2002034845(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010954152 |
申请日期 |
2001.09.18 |
申请人 |
FUJIMURA TAKASHI;KAWAMURA SHINICHI |
发明人 |
FUJIMURA TAKASHI;KAWAMURA SHINICHI |
分类号 |
G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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