发明名称 |
SILICON CORNER ROUNDING BY ION IMPLANTATION FOR SHALLOW TRENCH ISOLATION |
摘要 |
A method for rounding corners of a silicon substrate, in accordance with the present invention, includes forming a plateau on a silicon substrate having corners at edges of the plateau. A mask is formed on a top surface of the plateau, which is recessed back from vertical edges of the plateau to provide exposed horizontal portions. Fluorine or Argon dopants are implanted at the corners and on the exposed portions, and the substrate is oxidized such that the corners become rounded providing a gradual transition at the edges of the plateau.
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申请公布号 |
WO0150501(A3) |
申请公布日期 |
2002.03.21 |
申请号 |
WO2000US35497 |
申请日期 |
2000.12.28 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INFINEON TECHNOLOGIES RICHMOND, LP |
发明人 |
FULLER, ROBERT, T.;DAVIS, JONATHAN, PHILIP;RENNIE, MICHAEL |
分类号 |
H01L21/762;(IPC1-7):H01L21/762;H01L21/823 |
主分类号 |
H01L21/762 |
代理机构 |
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主权项 |
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