Method of manufacturing semiconductor device and method of manufacturing infrared image sensor

摘要

Present invention provides a method of manufacturing an infrared image sensor in which an etching gas is introduced through etching holes in a plurality of positions into a semiconductor substrate to form a hollow portion, the etching gas is introduced only through an etching hole in a splicing pillar when etching is started. This method makes it possible to obtain this provides an etching configuration which has a largest depth right beneath the splicing pillar and which becomes shallower toward ends of the substrate, and therefore there is no need for forming deep etching stoppers as in the prior art.