发明名称 Film formation method using sputtering and production method of photovoltaic element using same
摘要 In a film formation method comprising introducing a sputtering gas into a film forming chamber and forming a film on a substrate therein, the partial pressure of H2O in an atmosphere inside the film forming chamber is controlled so as to satisfy prescribed conditions, thereby forming a reflective layer of a prescribed reflectance on the substrate, thereby providing a film formation method using sputtering and a production method of a photovoltaic element using the film formation method that attain stable good film formation even during long-time sputter film formation, can constantly form a reflective film with a desired reflectance, has excellent workability and durability, and constantly attain high photoelectric conversion efficiency.
申请公布号 US2002033331(A1) 申请公布日期 2002.03.21
申请号 US20010867632 申请日期 2001.05.31
申请人 NAKAYAMA AKIYA 发明人 NAKAYAMA AKIYA
分类号 C23C14/06;C23C14/08;C23C14/14;C23C14/34;C23C14/54;C23C14/56;H01B13/00;H01L31/0392;H01L31/04;H01L31/052;H01L31/18;(IPC1-7):C23C14/32 主分类号 C23C14/06
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