| 摘要 |
PURPOSE: Integrated memory having memory cells and buffer capacitors is provided, which has largely homogeneous area coverage and in which a comparatively high dielectric strength is produced permanently through the use of the buffer capacitors. CONSTITUTION: The buffer capacitors(CP) are each connected through a region(GB) to a contact(K2). The contacts(K2) in this case constitute an electrical connection to one of the column lines(BLK). The contacts(K2) are also referred to as(CB) contacts. The row lines(WLK) are not electrically connected to the regions(GB). They are connected to the potential(V1), as are the column lines(BLK). The buffer capacitors(CP) are disposed in such a way that the respective connection or the respective region(GB) between the respective buffer capacitor(CP) and the contact(K2) is disposed parallel to the respective row line(WLK). In particular, a permanent operational reliability of the buffer capacitors(CP) is ensured because the contacts(K2) and the buffer capacitors(CP) are not connected to one another through a selector transistor.
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