发明名称 CMP SYSTEM FOR METAL DEPOSITION
摘要 A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer (1) and a moving polishing pad, which deposits metal onto dished metal (5) in trenches (4) in a layer (3) of an interlayer dielectric; and by polishing the wafer (1) with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
申请公布号 WO0223613(A2) 申请公布日期 2002.03.21
申请号 WO2001US28866 申请日期 2001.09.13
申请人 RODEL HOLDINGS, INC. 发明人 THOMAS, TERENCE, M.;SO, JOSEPH, K.
分类号 B24B37/04;H01L21/288;H01L21/321;H01L21/768 主分类号 B24B37/04
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