| 摘要 |
<p>This film forming method comprises a first step of forming a first insulation film the essential component of which is a material having a first dielectric constant over the surface of a semiconductor substrate and a second step of forming a second insulation film the essential component of which is a material having a second dielectric constant larger than the first one over the first insulation film to be thicker than this first insulation film. Since the process of film formation of a high dielectric constant material that constitutes the second insulation film is executed by following the formation of a barrier layer that is the first insulation film, it is possible to form a gate of high dielectric material stable to the substrate.</p> |
