发明名称 |
Wiring line assembly for thin film transistor array substrate and a method for fabricating the same |
摘要 |
According to one aspect of the present invention, the thin film transistor array substrate basically includes a gate line assembly based on an Ag alloy. The Ag alloy comprises Ag and at least one of alloy elements and the alloy elements each bearing a low melting point. The gate line assembly comprises a gate electrode and a gate line. A data line assembly crosses over the gate line assembly while being insulated from the gate line assembly. The data line assembly comprises a source electrode, a drain electrode and a data line. A semiconductor layer contacts the source electrode and the drain electrode. The semiconductor layer forms a thin film transistor together with the gate electrode, the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode.
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申请公布号 |
US2002033484(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010917689 |
申请日期 |
2001.07.31 |
申请人 |
JEONG CHANG-OH;LEE JAE-GAB;CHO BEOM-SEOK |
发明人 |
JEONG CHANG-OH;LEE JAE-GAB;CHO BEOM-SEOK |
分类号 |
G02F1/1343;C22C5/06;C23C14/34;G02F1/1362;G02F1/1368;H01B1/02;H01L21/28;H01L21/3205;H01L21/77;H01L21/84;H01L23/52;H01L23/532;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036 |
主分类号 |
G02F1/1343 |
代理机构 |
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主权项 |
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地址 |
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