| 发明名称 |
A METHOD TO REDUCE POST-DEVELOPMENT DEFECTS WITHOUT SACRIFICING THROUGHPUT |
| 摘要 |
Post-development defects in the manufacture of semiconductor devices through the use of surfactants, suchas ammonium lauryl sulfate, incorporated in the rinse water or the developer for the resist. The surfactants effectively remove resist defects in or around the resist pattern without attacking the resist itself. |
| 申请公布号 |
WO0223598(A2) |
申请公布日期 |
2002.03.21 |
| 申请号 |
WO2001US42148 |
申请日期 |
2001.09.14 |
| 申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LU, ZHIJIAN;MOREAU, WAYNE;CHEN, KUANG, JUNG;MACK, GEORGE |
| 分类号 |
C11D1/14;C11D11/00;G03F7/30;G03F7/32;G03F7/40 |
主分类号 |
C11D1/14 |
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代理人 |
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