发明名称 |
PRODUCTION METHOD FOR ANNEALED WAFER |
摘要 |
There is provided a manufacturing process for an annealed wafer capable of reducing boron contamination occurring while annealing is performed in a state where a wafer surface after cleaning is exposed to a gas in Ar atmosphere to suppress a change in resistivity due to an increase in a boron concentration in the vicinity of the wafer surface after annealing and manufacture an annealed wafer in which a difference in a boron concentration between a surface layer portion thereof and a bulk portion thereof is essentially not a problem even if a silicon wafer having a comparative low boron concentration (1 x 10<16> atoms/cm<3> or less) is used as the annealed wafer. The manufacturing process for an annealed wafer comprises: cleaning a silicon wafer; and loading the silicon wafer into a heat treatment furnace to heat-treat the silicon wafer in an Ar atmosphere, wherein an aqueous solution including hydrofluoric acid is used as a final cleaning liquid in the cleaning. <IMAGE> |
申请公布号 |
EP1189269(A1) |
申请公布日期 |
2002.03.20 |
申请号 |
EP20010915769 |
申请日期 |
2001.03.26 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
AKIYAMA, SHOJI;KOBAYASHI, NORIHIRO;TAMATSUKA, MASARO;NAGOYA, TAKATOSHI |
分类号 |
H01L21/306;H01L21/322;H01L21/324 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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