发明名称 |
Process for fabricating article comprising photonic band gap material |
摘要 |
An improved lithographic process for fabricating articles comprising photonic band gap materials with micron-scale periodicities is provided, the process readily capable of being performed by current lithographic processes and equipment. The process involves providing a three-dimensional structure made up of a plurality of stacked layers, where each layer contains a substantially planar lattice of shapes of a first material, typically silicon, with interstices between the shapes. Each shape contacts at least one shape of an adjacent layer, the interstices throughout the plurality of layers are interconnected, and the interstices comprise a second material, e.g., silicon dioxide. Typically, the second material is etched from the interconnected interstices to provide a structure of the first material and air, this structure designed to provide a particular photonic band gap. <IMAGE> |
申请公布号 |
EP1184689(A3) |
申请公布日期 |
2002.03.20 |
申请号 |
EP20010302876 |
申请日期 |
2001.03.28 |
申请人 |
AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION |
发明人 |
CIRELLI, RAYMOND A.;NALAMASU, OMKARAM;PATEL, SANJAY;PAU, STANLEY;WATSON, GEORGE P.;WHITE, CHRISTPHER ALAN;ZEHNER, ROBERT WAVERLY |
分类号 |
G02B6/13;G02B1/00;G02B1/02;G02B6/12;G02B6/122;(IPC1-7):G02B6/12;H01Q15/00 |
主分类号 |
G02B6/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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