发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To provide a semiconductor device wherein processes are simple and cost reduction is enabled in a semiconductor device having a window for fusing, and a method for manufacturing the semiconductor device. CONSTITUTION: In this semiconductor device, a position of a side wall 44 of a second protective insulating film 42 for protection on a window opening part for a fuse is continuous with a position of a side wall 45 of a first protective insulating film 39, and a step-difference does not exist. As a result, it does not happen that polyimide protrudes in a fuse window on account of deviation of matching of the polyimide, and an aperture 50 of a fuse window is narrowed so that stable fusing is enabled. In this method for manufacturing the semiconductor device, a first protective insulating film 39 of the window opening for a fuse, a thin silicon nitride film 38 and an interlayer insulating film 34 are etched simultaneously by using the second protective insulating film 42 as a mask, so that it is unnecessary that photolithography is added one time for window opening of a metal fuse by another process of opening a bonding pad 41. Consequently, processes are simplified, and cost can be reduced.
申请公布号 KR20020021342(A) 申请公布日期 2002.03.20
申请号 KR20010056405 申请日期 2001.09.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOIKE HIDETOSHI
分类号 H01L21/3205;H01L21/82;H01L23/52;H01L23/525;(IPC1-7):H01L21/82 主分类号 H01L21/3205
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