发明名称 |
SEMICONDUCTOR AND MANUFACTURING METHOD FOR SEMICONDUCTOR |
摘要 |
An arrangement in a semiconductor component includes a highly doped layer on a substrate layer and is delimited by at least one trench extending from the surface of the component through the highly doped layer. A sub-layer between the substrate layer and the highly doped layer is doped with the same type of dopant as the buried collector, but to a lower concentration. The sub-layer causes a more even distribution of the potential lines in the substrate and in a sub-collector layer, thereby eliminating areas of dense potential lines and increasing the breakdown voltage of the component, (i.e., because the breakdown voltage is lower in areas with dense potential lines). |
申请公布号 |
EP1188185(A1) |
申请公布日期 |
2002.03.20 |
申请号 |
EP20000946620 |
申请日期 |
2000.06.21 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) |
发明人 |
SJOEDIN, H KAN;SOEDERBAERG, ANDERS |
分类号 |
H01L21/331;H01L21/74;H01L21/76;H01L21/763;H01L29/08;H01L29/732;H01L29/861 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|