发明名称 |
Iridium composite barrier structure and method for same |
摘要 |
An Ir combination film has been provided that is useful in forming an electrode of a ferroelectric capacitor. The combination film includes tantalum and oxygen, as well as iridium. The Ir combination film effectively prevents oxygen diffusion, and is resistant to high temperature annealing in oxygen environments. When used with an underlying Ta or TaN layer, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. A method for forming an Ir composite film barrier layer and Ir composite film ferroelectric electrode are also provided. |
申请公布号 |
EP1035589(A3) |
申请公布日期 |
2002.03.20 |
申请号 |
EP20000301790 |
申请日期 |
2000.03.06 |
申请人 |
SHARP KABUSHIKI KAISHA;SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHANG, FENGYAN;MAA, JER-SHEN;HSU, SHENG TENG |
分类号 |
H01L21/8247;C23C14/08;C23C16/40;H01L21/02;H01L21/203;H01L21/28;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/51;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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