发明名称 Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist
摘要 There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.
申请公布号 US6358672(B2) 申请公布日期 2002.03.19
申请号 US19980192000 申请日期 1998.11.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEOUNG GYU-CHAN;CHOI KWANG-SEOK;JUNG JIN-HANG;KIM YOUNG-SUN;LEE HONG;CHUNG HOE-SIK;LEE SUNG-HO;HA HUN-HWAN
分类号 G03F7/20;G03F7/40;H01L21/308;(IPC1-7):G03C5/56 主分类号 G03F7/20
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