发明名称 METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTIVE ULTRAFINE PARTICLE
摘要 PROBLEM TO BE SOLVED: To provide a method for producing semiconductive ultrafine particles which are narrow in particle size distribution and excellent in light absorption and emission properties. SOLUTION: In the method, the first substance containing a positive element the electronegativity of which is 2.0 or below and the second substance of a chalcogen compound expressed by formula (1) of M1M2E (wherein M1 and M2 are elements of the group I in the periodic table or onium residues and can be different from each other; E is an element of the group XVI of the periodic table) are used as a raw material for the semiconductor, both substances are brought into contact in the liquid phase in a tubular passage reactor to make chalcogen compound semiconductor crystals grow, and the Reynolds number if the liquid phase is at least 1.
申请公布号 JP2002079076(A) 申请公布日期 2002.03.19
申请号 JP20010154766 申请日期 2001.05.24
申请人 MITSUBISHI CHEMICALS CORP 发明人 SAIDA SOICHIRO;KAWA MANABU
分类号 B01J19/00;H01L33/28;H01L33/50 主分类号 B01J19/00
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