发明名称 |
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTIVE ULTRAFINE PARTICLE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing semiconductive ultrafine particles which are narrow in particle size distribution and excellent in light absorption and emission properties. SOLUTION: In the method, the first substance containing a positive element the electronegativity of which is 2.0 or below and the second substance of a chalcogen compound expressed by formula (1) of M1M2E (wherein M1 and M2 are elements of the group I in the periodic table or onium residues and can be different from each other; E is an element of the group XVI of the periodic table) are used as a raw material for the semiconductor, both substances are brought into contact in the liquid phase in a tubular passage reactor to make chalcogen compound semiconductor crystals grow, and the Reynolds number if the liquid phase is at least 1. |
申请公布号 |
JP2002079076(A) |
申请公布日期 |
2002.03.19 |
申请号 |
JP20010154766 |
申请日期 |
2001.05.24 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
SAIDA SOICHIRO;KAWA MANABU |
分类号 |
B01J19/00;H01L33/28;H01L33/50 |
主分类号 |
B01J19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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