发明名称 Technique for etching oxides and/or insulators
摘要 A method of etching a layer of electrical insulating material including a layer of strontium titanate on a surface of a semiconductor substrate. The layer of strontium titanate is immersed in a passivated etching solution including an acid and HF and focused light is directed onto the surface of the layer of strontium titanate at areas to be etched, so as to depassivate the passivated surface and to etch the layer of strontium titanate only at the surface receiving collimated light. In a preferred embodiment, the passivated etching solution includes HCl and less than 1000 ppm of HF.
申请公布号 US6358430(B1) 申请公布日期 2002.03.19
申请号 US19990362251 申请日期 1999.07.28
申请人 MOTOROLA, INC. 发明人 MARSHALL DANIEL SCOTT;SALEM LUCIA R.;TOMPKINS HARLAND G.
分类号 H01L21/306;H01L21/311;(IPC1-7):B44C1/22 主分类号 H01L21/306
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