发明名称 |
Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
摘要 |
This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
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申请公布号 |
US6358756(B1) |
申请公布日期 |
2002.03.19 |
申请号 |
US20010777888 |
申请日期 |
2001.02.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ;LEE ROGER;KELLER DENNIS;DOAN TRUNG T.;HINEMAN MAX F.;EARL REN |
分类号 |
H01F41/30;H01L21/8246;H01L27/22;(IPC1-7):H01L21/00;H01L21/823 |
主分类号 |
H01F41/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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