发明名称 |
High power switching module |
摘要 |
A power switching module includes a substrate having at least one silicon die forming at least one power switching element and having leadframe terminal posts extending away therefrom. A planar negative rail layer providing a negative power supply and including a non-inductive current shunt resistor formed therein and a planar positive rail layer providing a positive power supply are positioned at the substrate so that the negative rail layer and the positive rail layer are coplanar with respect to each other. A phase output layer providing a phase output signal is also positioned at the substrate. Each of the layers are electrically isolated from each of the other layers and are electrically connected to the substrate.
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申请公布号 |
US6359331(B1) |
申请公布日期 |
2002.03.19 |
申请号 |
US19970997220 |
申请日期 |
1997.12.23 |
申请人 |
FORD GLOBAL TECHNOLOGIES, INC.;SEMIPOWER SYSTEMS INC. |
发明人 |
RINEHART LAWRENCE EDWARD;SANKARAN VENKATESWARA ANAND;MILLER JOHN MICHAEL |
分类号 |
H01L23/64;H01L25/11;H01L25/16;(IPC1-7):H01L23/52;H01L23/48;H01L23/34 |
主分类号 |
H01L23/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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