发明名称 High power switching module
摘要 A power switching module includes a substrate having at least one silicon die forming at least one power switching element and having leadframe terminal posts extending away therefrom. A planar negative rail layer providing a negative power supply and including a non-inductive current shunt resistor formed therein and a planar positive rail layer providing a positive power supply are positioned at the substrate so that the negative rail layer and the positive rail layer are coplanar with respect to each other. A phase output layer providing a phase output signal is also positioned at the substrate. Each of the layers are electrically isolated from each of the other layers and are electrically connected to the substrate.
申请公布号 US6359331(B1) 申请公布日期 2002.03.19
申请号 US19970997220 申请日期 1997.12.23
申请人 FORD GLOBAL TECHNOLOGIES, INC.;SEMIPOWER SYSTEMS INC. 发明人 RINEHART LAWRENCE EDWARD;SANKARAN VENKATESWARA ANAND;MILLER JOHN MICHAEL
分类号 H01L23/64;H01L25/11;H01L25/16;(IPC1-7):H01L23/52;H01L23/48;H01L23/34 主分类号 H01L23/64
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