发明名称 |
MIS transistor and method of fabricating the same |
摘要 |
Grooves are formed in side walls to be adjacent to a gate electrode. Thereafter a silicide film is formed on a surface of the gate electrode. Thus, the gate electrode is prevented from electrical connection with a source/drain layer resulting from formation of silicide films on surfaces thereof, and its resistance value is prevented from being increased by the silicide films hardly causing phase transition following refinement.
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申请公布号 |
US6359321(B2) |
申请公布日期 |
2002.03.19 |
申请号 |
US19970874410 |
申请日期 |
1997.06.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIMIZU SATOSHI;ODA HIDEKAZU |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L27/088 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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