发明名称 |
Apparatus for detecting plasma etch endpoint in semiconductor fabrication and associated method |
摘要 |
An apparatus for semiconductor processing reduces etch endpoint interference by analyzing the plasma while excluding reflections from the semiconductor wafer. The apparatus includes a chamber having a semiconductor substrate holder, a plasma generator, and a window. An optical fiber is connected to the window so as to be optically connected to the plasma from outside the chamber. A processor is connected to a second end of the optical fiber for analyzing the plasma. The window has a substantially planar portion and a substantially tubular portion extending outwardly therefrom. The tubular window portion has a closed end opposite the planar window portion, and the optical fiber is connected to the closed end of the tubular window portion. The tubular window portion is positioned at a predetermined angle relative to the planar window portion so as to be optically coupled to view the plasma, while avoiding reflections from the semiconductor substrate to thereby reduce the interference.
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申请公布号 |
US6358359(B1) |
申请公布日期 |
2002.03.19 |
申请号 |
US19990432926 |
申请日期 |
1999.11.03 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
PEINADOR JOSE A.;GONZALEZ JUAN GUILLERMO VERGES |
分类号 |
H01J37/32;H01L21/00;(IPC1-7):H01L21/00;G01N21/00 |
主分类号 |
H01J37/32 |
代理机构 |
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