| 发明名称 |
Static semiconductor memory cell formed in an n-well and p-well |
| 摘要 |
A memory cell includes an n well and a p well. A word line is provided over memory cell and n well and p well are arranged in a direction in which word line extends. A single word line is provided for each memory cell and formed of metal.
|
| 申请公布号 |
US6359804(B2) |
申请公布日期 |
2002.03.19 |
| 申请号 |
US19980166906 |
申请日期 |
1998.10.06 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KURIYAMA HIROTADA;MAEDA SHIGENOBU |
| 分类号 |
H01L21/8244;H01L27/11;H01L27/12;(IPC1-7):G11C11/00 |
主分类号 |
H01L21/8244 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
