| 摘要 |
A microbolometer infrared sensor utilizes a porous silicon bridge as its thermal isolating and mechanical supporting structure. Porous silicon formed from single crystal silicon on lightly doped p-type silicon has a thermal conductivity lower than silicon dioxide and silicon nitride, and, therefore, when used as a mechanical supporting structure, can offer better thermal isolation performance. The porous silicon layer can be fabricated much thicker than silicon dioxide and silicon nitride membranes since there is almost no residual stress therein. A thicker porous silicon bridge has higher mechanical support strength. The porous silicon process is a low temperature process. It facilitates a fabrication strategy of microelectronics first and micromechanics last.
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