发明名称 Semiconductor memory device having improved data transfer rate without providing a register for holding write data
摘要 A semiconductor memory device has a read data line, a write data line, a data holding circuit, and a data writing circuit. The data holding circuit holds data on the write data line, and the data writing circuit writes the data held on the write data line into a memory cell. Further, a semiconductor memory device has a read data line, a write data line, and an address information holding circuit. The address information holding circuit holds address information that is input in relation to write data, and when an access occurs to the address held in the address information holding circuit, data held on the write data line is written into a memory cell corresponding to the address.
申请公布号 US6359813(B1) 申请公布日期 2002.03.19
申请号 US20000644547 申请日期 2000.08.24
申请人 FUJITSU LIMITED 发明人 UCHIDA TOSHIYA;MATSUZAKI YASUROU
分类号 G11C11/407;G11C7/10;G11C8/00;G11C8/06;G11C11/409;(IPC1-7):G11C16/04 主分类号 G11C11/407
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