发明名称 Electronic device and method for producing the same
摘要 A method for manufacturing an electronic device includes the steps of: forming a base film comprising a material capable of reactive-ion etching with a fluorine-based gas on a substrate; forming a thin film comprising a material capable of reactive-ion etching with a chlorine-based gas on the base film; etching the thin film by a reactive ion etching with a gas containing the chlorine-based gas; and etching the base film exposed by the etched thin film by a reactive ion etching with a gas containing the fluorine-based gas.
申请公布号 US6358429(B1) 申请公布日期 2002.03.19
申请号 US19990354481 申请日期 1999.07.16
申请人 MURATA MANUFACTURING CO., LTD. 发明人 KOSHIDO YOSHIHIRO
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H03H3/08;(IPC1-7):H01L21/306 主分类号 H01L21/28
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