| 摘要 |
A device for reading/rewriting a memory cell of a dynamic random-access memory organized in rows and columns, comprises, for each column, a first read/rewrite amplifier, and at least one second read/rewrite amplifier arranged in parallel with the first amplifier. A controller is provided for one of the amplifiers so that the amplifier is able to store the information contained in the memory cell for refreshing thereof, and so that the other amplifier is able to simultaneously perform read/rewrite accesses to and from the memory cell. One of the amplifiers may be permanently dedicated to operations for refreshing the memory cells and the other may be dedicated to read/write operations. Outputs of the amplifiers are connected to common output columns, and the controller includes an interrupter for the output of each amplifier to isolate the output from the corresponding output column and from the corresponding output of the other amplifier.
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