发明名称 Composite transistor incorporating collector-common resistors
摘要 A semiconductor device requires a reduced cost, has a decreased substrate mounting area, and ensures that paired transistors, etc., have equivalent characteristics to each other. A separation strip 10 splits a semiconductor substrate 3 of one conductivity type into pairing regions and surrounds the semiconductor substrate, and has a high impurity concentration than a front surface side of the semiconductor substrate 3 but the same conductivity type with semiconductor substrate 3. A pair of vertical type semiconductor elements 1, 2 is disposed which shares the semiconductor substrate as a collector region, and the semiconductor elements 1, 2 comprise base regions 12, 22 of a reverse conductivity type which are formed respectively in the pairing regions and emitter regions 13, 23 of the one conductivity type which are formed within the base regions 12, 22 of the reverse conductivity type. At least one pair resistor elements 14, 24 is formed in the pairing regions on an insulation film which covers a surface of the semiconductor substrate 3.
申请公布号 US6359326(B1) 申请公布日期 2002.03.19
申请号 US19990401724 申请日期 1999.09.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 UTSUNOMIYA SATOSHI;TOMITA NOBUO
分类号 H01L29/73;H01L21/331;H01L21/761;H01L21/8222;H01L21/8234;H01L27/06;H01L27/07;H01L29/732;(IPC1-7):H01L29/00 主分类号 H01L29/73
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