| 摘要 |
<p>A trilayer seed layer structure (302) is employed between a first read gap layer (216) and a spin valve sensor (300) for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the spin valve sensor (300), the trilayer seed layer structure(302)is located between a first read gap layer (216) and a ferromagnetic free layer (202). The antiferromagnetic pinning layer (214) is preferably nickel manganese (Ni-Mn). The trilayer seed layer structure includes a first seed layer (SL1) that is a first metallic oxide, a second seed layer (SL2) that is a second metallic oxide and a third seed layer (SL3) that is a nonmagnetic metal. A preferred embodiment is a first seed layer (SL1) of nickel oxide (NiO), a second seed layer (SL2) of nickel manganese oxide (NiMnO x ), and a third seed layer (SL3) of copper (Cu).</p> |
