发明名称 PLASMA TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: To enlarge a plasma density region wherein a continuously uniform state can be ensured in a parallel-plate type ECR plasma treatment apparatus. CONSTITUTION: A second magnetic field forming means 18 is introduced in a first magnetic field forming means which is formed by solenoid coils 17, the distribution of plasma radiation in the direction of the magnetic flux in the surface of a plane plate 2 is controlled by a composite magnetic field using these first and second magnetic field forming means, and the distribution of the quantity of interaction between the magnetic field and electromagnetic waves is controlled. As a result, a plasma treater of a structure that the uniformity of a plasma can be ensured even at the time of the formation of the high- density plasma, the formation of the continuous plasma becomes possible all over from a low-density region to a wide high-density region and a treatment on the wide conditions of the plasma in enabled including a high-speed processing using a high-density condition is realized.
申请公布号 KR20020020975(A) 申请公布日期 2002.03.18
申请号 KR20000055159 申请日期 2000.09.20
申请人 HITACHI.LTD. 发明人 IZAWA MASARU;MOMONOI YOSHINORI;NEGISHI NOBUYUKI;TAJI SHINICHI;YOKOWA KENETSU
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H05H1/46
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