| 摘要 |
PURPOSE: To prevent abrupt cooling, after heating a substrate. CONSTITUTION: An apparatus for heat treating the substrate comprises a DCC processing unit 13 for curing a coating liquid coating a wafer W, capable of forming two treating chambers of a high-temperature heating chamber 23 and a temperature-lowering chamber 24. A heat plate 25 for mounting and heating the wafer W is provided in the chamber 23, to heat the wafer W to a high temperature of 450°C. Meanwhile, a temperature lowering plate 35 containing a heater 36 is provided in the chamber 24 to maintain the plate 35 at a temperature at a temperature of 200°C lower than that of the plate 25. The plate 35 is constituted to be movable the plate 25, so as to receive the wafer W of the plate 25. When the wafer W is heated to 450°C in the chamber 23 and then cooled to 23°C C, the wafer W is once mounted on the plate 35 of the chamber 24, the wafer W is lowered to 200°C, and then cooled to 23°C by another cooling unit.
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