发明名称 MACHINING METHOD OF SILICON SINGLE-CRYSTAL INGOT
摘要 PROBLEM TO BE SOLVED: To provide a method for machining a raw-material single crystal ingot so that it can be sliced in a wafer without losing the weight of the grown silicon single-crystal ingot as much as possible, and without being subjected to impurity contamination. SOLUTION: In this machining method for slicing a wafer from the grown silicon single-crystal ingot, prior to slicing the wafer, when the side of the single-crystal ingot 10 is ground for machining, a process for grinding and removing merely a crystal habit line 31 appearing at least in the ingot is made.
申请公布号 JP2002075924(A) 申请公布日期 2002.03.15
申请号 JP20000257529 申请日期 2000.08.28
申请人 SHIN ETSU HANDOTAI CO LTD;SHIN ETSU CHEM CO LTD 发明人 KIMURA MASAKI
分类号 B24B5/36;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B5/36
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