| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency electronic element and a diode, a transistor and a thyristor using the electronic element which is superior in heat resistance, radiation resistance and high frequency response, suited to high temperature devices, high power devices and high frequency electronic devices, suppresses an Ohmic current and lowers the barriers energy for injecting carriers into a channel from a heavily doped semiconductor, thereby lowering the rising electric field of a spatial charge limiting current. SOLUTION: A high-resistivity semiconductor diamond film 5 having a carrier concentration of 1015 cm-3 or less is provided on an insulator diamond crystal substrate 1, low-resistivity semiconductor diamond films 2a, 2b each having a carrier concentration of 1020 cm-3 or more are provided so as to sandwich that film 5, and the semiconductor diamond films 5, 2a, 2b have the same conductivity type. Source electrodes 11a, drain electrodes 11b and gate electrodes 9b are provided on the semiconductor diamond films 2a, 2b, 5, respectively. |
