SEMICONDUCTOR DEVICE AND ITS METHOD OF MANUFACTURING

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having good characteristics without being affected by positive charges and its method of manufacturing. SOLUTION: There is provided a gate film consisting of three layers of a first gate oxide film 2/a gate nitride film 3/a second gate oxide film 4, in order on an inside wall of a trench formed into the substrate of the semiconductor. Among these three layers of gate films, at least the gate nitride film 3 and the second gate oxide film 4 are connected with an electrode 7 through an inter-layer insulting film 6. The electrode 7 is also formed by producing at least its part as a film at a sputtering temperature of 450 deg.C or above.