| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD semiconductor-manufacturing device using vacuum ultraviolet rays for improving the mass productivity and quality of a semiconductor device by increasing the generation rate of film formation and improving film quality. SOLUTION: When a film-forming raw material is irradiated with vacuum ultraviolet lays 11 in a CVD semiconductor-manufacturing device using vacuum ultraviolet rays, the raw material is photolyzed, and neutral radicals, positive ions and, electrons are generated. When a negative bias is applied to a substrate 2, the positive ions are forcibly attracted by electrostatic attraction force and are attracted to the substrate 2 to form a film. Since a neutral radical is not charged, the film is formed on the substrate 2 regardless of the negative bias, thus achieving double generation rate, in experimental values, in comparison with a conventional non-bias system.
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