发明名称 SURFACE ROUGHENING METHOD OF SILICON SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for forming a rough surface of a silicon substrate which is used for a semiconductor substrate, especially for a solar battery, with excellent efficiency and high tact. SOLUTION: In a surface roughening method of a silicon substrate wherein the surface of a silicon substrate is made rough by dry etching, etching is performed while etching residue is stuck on a surface of the silicon substrate, and the surface is roughened. After that, the etching residue is eliminated.</p>
申请公布号 JP2002076404(A) 申请公布日期 2002.03.15
申请号 JP20000263023 申请日期 2000.08.31
申请人 KYOCERA CORP 发明人 INOMATA YOSUKE;FUKUI KENJI
分类号 H01L21/302;H01L21/3065;H01L31/04;(IPC1-7):H01L31/04;H01L21/306 主分类号 H01L21/302
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