METHOD OF MANUFACTURING HIGH SPEED POWER DIODE AND HIGH SPEED POWER DIODE MANUFACTURED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a high speed power diode having soft recovery. SOLUTION: A carrier life time in a semiconductor substrate 10 is controlled by a first bombardment 14 without masking and a second bombardment 15 having the next crosswise direction profile with masking, for improved reverse characteristics to be obtained. The first bombardment 14 without masking is an ion bombardment, and controls a switching response of the power diode. The second bombardment 15 with masking is an electron bombardment, and reduces an active area of the power diode. The power diode having such semiconductor substrate 10 has a thermal resistance Rth that reduces in proportion to the active area of the power diode.