| 摘要 |
<p>PROBLEM TO BE SOLVED: To guarantee the reliability of a gate insulation film of a MIS transistor at the time of a non-selection state. SOLUTION: Setting is performed so that the reliability evaluation value of a gate insulation film of a MIS transistor at the time of a non-selection state is lower than the reliability evaluation value of a gate insulation film of a MIS transistor at the time of a selection state. The applied electric field is decided by this reliability evaluation value. Also, the applied electric field of a gate insulation film of the MIS transistor of a non-selection state can be made lower than that in an on-state, reliability of a gate insulation film of the transistor of a non-selection state can be guaranteed.</p> |
