| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a multilayer interconnection by preventing disconnection of damascene wirings due to electromigration. SOLUTION: A reservoir portion R consisting of a first hole pattern 10a where a Cu film 13 of the same layer as the Cu film 13 constituting a second metal wiring M2 is buried is provided in the lower part of a second hole pattern 19 for connecting a second metal wiring M2 formed by a damascene process with a third metal wiring M3. Thus, even if Cu atoms of the Cu film 13 constituting the second metal wiring M2 move by electromigration, the Cu film 13 of the reservoir portion R becomes a source of supply of the Cu atoms to the second metal wiring M2. As a result, voids can hardly occur in the second metal wiring M2.
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