发明名称 SEMICONDUCTOR DEVICE, MICROCOMPUTER, AND FLASH MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device the characteristics of which are adjustable as desired with high reliability without being affected by the variance or the like of device characteristics. SOLUTION: This device is provided with a replica MOS transistor 2 for measuring a current value connected to an external measuring terminal 3. A delay circuit 4 or the like giving a desirable characteristics has a constant current source MOS transistor formed by the same process as the replica MOS transistor, and trimming voltage Vtri is applied commonly to the constant current source MOS transistor and the replica MOS transistor 2. Trimming data decided based on a current value measured from the external measuring terminal 3 is stored in a storage means 13 such as a non-volatile memory being electrically rewritable. The trimming voltage Vtri is decided by the trimming data.</p>
申请公布号 JP2002074997(A) 申请公布日期 2002.03.15
申请号 JP20000267044 申请日期 2000.09.04
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 YAMAKI TAKASHI;TAKEUCHI MIKI;HIRAKI MITSURU;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;FUJITO MASAMICHI
分类号 G11C17/00;G11C5/00;G11C7/00;G11C11/413;G11C11/56;G11C16/02;G11C16/06;G11C16/28;G11C16/30;G11C29/00;G11C29/02;G11C29/14;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;H01L31/0336;(IPC1-7):G11C29/00;H01L21/824 主分类号 G11C17/00
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