| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which enables formation of a capacitor element having stabilized characteristics, by suppressing the etching of a capacitor dielectric layer by a resist remover. SOLUTION: The method of manufacturing semiconductor device comprises a process of forming a lower electrode on a semiconductor substrate; a process of forming a dielectric layer on the lower electrode; a process of patterning the dielectric layer by etching with the resist as a mask; a process of heating a solution containing sulfuric acid and hydrogen peroxide; a process of adding hydrogen peroxide to the solution in a quantity so that the density of the hydrogen peroxide becomes as prescribed, preferably, 3.5 wt.% or lower; a process of removing the resist by dipping the semiconductor substrate including the resist in the solution, immediately after the supplementation of the hydrogen peroxide; and a process of forming an upper electrode on the dielectric layer. |
