| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which a leak current at the time of standby is reduced and high speed at the time of operation can be realized. SOLUTION: The power source line of an INV circuit having word lines row1, row2,..., rowK is connected to a source electrode of a switching transistor Mpv. Also, the ground line of the INV circuit and a ground line of a NAND circuit are both connected to a drain electrode of a ground transistor Mnv. Also, the gate electrode of the switching transistor Mpv is connected to an inversion output terminal of an INV circuit 4, a reversed control signal ct1b is supplied as an active signal Active, and a control signal ct1 from a control circuit is supplied directly to a gate electrode of the ground transistor Mnv as the active signal Active. Further, voltage Vbp and voltage Vbn whose settings can be arbitrarily changed are respectively given to the substrate potential of the switching transistor Mpv and the substrate potential of the ground transistor Mnv by the control circuit.
|
