发明名称 MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To enlarge an effective area by preventing a current leakage at a substrate end 1a, related to a method for manufacturing a photovoltaic device where amorphous semiconductor films 2 and 3 are provided on a main surface of a crystal semiconductor substrate 1, over which transparent electrode layers 4 and 5 are provided. SOLUTION: The side surface 1a of the crystal semiconductor substrate 1 is covered with a cover member 10. Then the amorphous semiconductor films 2 and 3 and the transparent electrode layers 4 and 5 are formed.</p>
申请公布号 JP2002076397(A) 申请公布日期 2002.03.15
申请号 JP20000258961 申请日期 2000.08.29
申请人 SANYO ELECTRIC CO LTD 发明人 NAKAI TAKUO;TAGUCHI MIKIAKI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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